Title :
The effects of device metal interconnect overlayers on SEE testing
Author :
Wert, Jerry ; Normand, Eugene ; Hafer, Craig
Author_Institution :
Boeing Co., Seattle, WA, USA
Abstract :
Technology advances in wafer processing and design, new device requirements and improved modeling necessitate the need for a careful determination of LET at and through the critical silicon region of interest during SEE testing.
Keywords :
interconnections; radiation effects; semiconductor device metallisation; semiconductor device testing; SEE testing; device metal interconnect overlayers; linear energy transfer; single event effects testing; wafer design; wafer processing; Aluminum; Chemical technology; Energy exchange; Integrated circuit interconnections; Manufacturing processes; Semiconductor device modeling; Silicon; Telephony; Testing; Transistors;
Conference_Titel :
Radiation Effects Data Workshop, 2005. IEEE
Print_ISBN :
0-7803-9367-8
DOI :
10.1109/REDW.2005.1532660
