Title :
CAD Modeling of 2 μm SOS-MOS Transistor and the Parameter Acquisition on an Automatic System
Author :
Ballay, N. ; Baylac, B. ; Ledanois, P.
Author_Institution :
EFCIS, Grenoble, France
Abstract :
We present a CAD model of SOS-MOS transistor with the channel length in the range of 2 μm, and the method for the parameter acquisition on an automatic system driven by a desk-top computer, for the case of the bulk not externally available.
Keywords :
CAD; MOSFET; electronic engineering computing; silicon-on-insulator; CAD modeling; SOS-MOS transistor; automatic system; desk-top computer; parameter acquisition; size 2 mum; Decision support systems; Equations; Iterative methods; Space charge; Threshold voltage; Voltage measurement;
Conference_Titel :
Solid State Circuits Conferene, 1980. ESSCIRC 80. 6th European
Conference_Location :
Grenoble
DOI :
10.1109/ESSCIRC.1980.5468759
