DocumentCode :
2411068
Title :
Phase Shifters with GaAs Dual Gate MESFETs
Author :
Tsironis, C. ; Harrop, P.
Author_Institution :
Labs. d´Electron. et de Phys. Appl., Limeil-Brevannes, France
fYear :
1980
fDate :
22-25 Sept. 1980
Firstpage :
212
Lastpage :
214
Abstract :
Dual gate MESFET phase shifters have been realized in the frequency range of 3 GHz to 12 GHz. Linear phase variation of more than 100° and gain of 4 dB at 12 GHz and 50° with 11 dB gain at 6 GHz have been achieved.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; linear phase filters; microwave phase shifters; GaAs; dual gate MESFET phase shifter; frequency 3 GHz to 12 GHz; gain 11 dB; gain 4 dB; linear phase variation; Capacitance; Circuits; FETs; Frequency; Gain measurement; Gallium arsenide; MESFETs; Phase measurement; Phase shifters; Resonance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Circuits Conferene, 1980. ESSCIRC 80. 6th European
Conference_Location :
Grenoble
Type :
conf
DOI :
10.1109/ESSCIRC.1980.5468775
Filename :
5468775
Link To Document :
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