Title :
40 mW, 100/spl deg/C maximum temperature operation of 655-nm band InGaP/InGaAlP strained multiple-quantum-well laser diodes
Author :
Shimada, N. ; Horiuchi, O. ; Gen-Ei, K. ; Tanaka, A. ; Okada, M. ; Watanabe, M. ; Itoh, Y. ; Okuda, H. ; Fukuoka, K.
Author_Institution :
Semicond. Group, Toshiba Corp., Kawasaki, Japan
Abstract :
40 mW, 100/spl deg/C maximum temperature operations have been realized in 655-nm band InGaP-InGaAlP strained multiple quantum-well laser diodes. Fundamental-transverse-mode operations up to 50 mW, high-frequency-modulation characteristics above 1 GHz, and furthermore, 70/spl deg/C, 30 mW stable operations over 1000 hours were demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser modes; laser stability; laser transitions; life testing; optical testing; quantum well lasers; semiconductor device testing; 100 C; 1000 h; 30 mW; 40 mW; 50 mW; 655 nm; 70 C; InGaP-InGaAlP; InGaP-InGaAlP strained multiple quantum-well laser diodes; InGaP/InGaAlP strained multiple-quantum-well laser diodes; fundamental-transverse-mode operations; high-frequency-modulation characteristics; life testing; mW stable operations; maximum temperature operation; Electron optics; Frequency; Laser feedback; Optical feedback; Photonics; Power lasers; Power system reliability; Quantum well devices; Temperature dependence; Temperature distribution;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734115
