Title :
Optical gain properties of 1.3-/spl mu/m n-type modulation-doped MQW lasers for parallel optical interconnections
Author :
Nakahara, K. ; Taniwatari, T. ; Haga, T. ; Toyonaka, T. ; Sudoh, T.K. ; Uomi, K.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
We experimentally demonstrate, for the first time, that the transparent carrier density is reduced in the 1.3-μm n-type modulation-doped MQW laser. This reduction causes the decrease in threshold current and the increase in the slope efficiency.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; optical interconnections; parallel architectures; quantum well lasers; 1.3 mum; InGaAsP; n-type modulation-doped MQW laser; n-type modulation-doped MQW lasers; optical gain properties; parallel optical interconnections; slope efficiency; threshold current; transparent carrier density; Electrons; Epitaxial layers; Indium gallium arsenide; Lasers and electrooptics; Optical materials; Optical modulation; Optical sensors; Quantum well devices; Quantum well lasers; Temperature dependence;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734121
