Title :
B10 finding and correlation to thermal neutron soft error rate sensitivity for SRAMs in the sub-micron technology
Author :
Wen, Shi-Jie ; Pai, S.Y. ; Wong, Richard ; Romain, Michael ; Tam, Nelson
Abstract :
In this paper, we report the presence of B10 based on SIMS analysis in SRAM arrays in the 90nm to 45nm technology nodes. The physical presence of B10 correlated very well with the thermal neutron soft error rate (SER) sensitivity of SRAM cells. This result confirmed that without BPSG layer in advanced Si technologies, there is still a high possibility of B10 contamination from the Fab process. Furthermore, a root cause of possible B10 source is suggested based on SIMS results.
Keywords :
SRAM chips; integrated circuit testing; radiation hardening (electronics); B10 correlation; BPSG layer; SIMS analysis; SRAM; size 45 nm to 90 nm; thermal neutron soft error rate sensitivity; Neutrons; Random access memory; Semiconductor device measurement; Sensitivity; Silicon; Transistors; B10; SER; SIMS; SRAM; thermal neutron;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International
Conference_Location :
Stanford Sierra, CA
Print_ISBN :
978-1-4244-8521-5
DOI :
10.1109/IIRW.2010.5706480
