Title :
The impact of LOC-structures on 670 nm (Al)GaInP highpower lasers
Author :
Lichtenstein, N. ; Winterhoff, R. ; Scholz, F. ; Schweizer, H.
Author_Institution :
4. Phys. Inst., Stuttgart Univ., Germany
Abstract :
From a fabrication series of large optical cavity (LOC) broad area semiconductor quantum well lasers with varying waveguide width we got minimal /spl alpha//sub 1/<1cm/sup -1/ resulting in /spl eta//sup d/=1.1 W/A for 64/spl times/2000 /spl mu/m/sup 2/ uncoated devices. Analysis of the above-threshold behaviour including temperature stability and leakage current effects results in total output powers >3.2 W qCW and >1 W CW at 20/spl deg/C.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser stability; leakage currents; quantum well lasers; waveguide lasers; 1 W; 20 C; 3.2 W; AlGaInP; AlGaInP highpower lasers; LOC-structures; above-threshold behaviour; fabrication series; large optical cavity broad area semiconductor quantum well lasers; leakage current effects; temperature stability; total output powers; uncoated devices; varying waveguide width; Lab-on-a-chip; Optical device fabrication; Optical devices; Optical waveguides; Quantum well lasers; Semiconductor lasers; Semiconductor waveguides; Temperature; Time of arrival estimation; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734132
