Title :
Demonstration of 2.5 Gb/s at 3.6 watts using a semiconductor flared optical amplifier
Author :
Vail, E.C. ; Hagberg, M. ; O´Brien, S. ; Ziari, M. ; Lang, R.
Author_Institution :
SDL Inc., San Jose, CA, USA
Abstract :
We demonstrate direct modulation of a InGaAs flared semiconductor amplifier at 2.5 Gb/s at peak powers of 3.6 W (ave. power of 1.8 W). This is the highest single mode power from any high speed semiconductor source.
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; indium compounds; laser modes; semiconductor optical amplifiers; 1.8 W; 2.5 Gbit/s; 3.6 W; InGaAs; InGaAs flared semiconductor amplifier; direct modulation; high speed semiconductor source; peak powers; semiconductor flared optical amplifier; single mode power; High power amplifiers; High speed optical techniques; Isolators; Laser modes; Optical modulation; Optical receivers; Oscillators; Power amplifiers; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734149
