DocumentCode :
2412273
Title :
Resonant-tunneling diode on the basis of silicon multilayer cathode
Author :
Goncharuk, Nina M.
Author_Institution :
Res. Inst. "Orion ", Kiev
fYear :
2007
fDate :
9-12 Oct. 2007
Firstpage :
1602
Lastpage :
1605
Abstract :
A numerical model of a new type of resonant- tunnelling diode based on electron resonant-tunnelling emission from silicon cathode with SiOx-Si multilayer coating has been developed. The model is founded on joint numerical solution of the Schrodinger and Poisson equations system for the time- independent electron wave function, electric field, current and voltage and a small-signal analysis of the last three alternating components. Emitter accumulation layer and contacts presence and an electron delay in a coating quantum well and in a diode transit layer were taken into account. The investigations have shown presence of a negative resistance microwave frequency band for the diode with the electron transit angle from 0 to 2pi/3. The upper frequency of the band is 1012 GHz when resonant tunnelling occurs through the highest resonant level in a quantum well.
Keywords :
Poisson equation; Schrodinger equation; cathodes; elemental semiconductors; resonant tunnelling diodes; silicon; Poisson equation; Schrodinger equation; coating quantum well; diode transit layer; electron resonant-tunnelling emission; electron transit angle; emitter accumulation layer; multilayer coating; negative resistance microwave frequency band; resonant-tunneling diode; silicon multilayer cathode; time-independent electron wave function; Cathodes; Coatings; Diodes; Electron emission; Nonhomogeneous media; Numerical models; Poisson equations; Resonance; Resonant tunneling devices; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-001-9
Type :
conf
DOI :
10.1109/EUMC.2007.4405516
Filename :
4405516
Link To Document :
بازگشت