Title :
Modelling of MESFET high order nonlinear distortion
Author :
Sivyakov, B.K. ; Gurjyanov, A.A.
Author_Institution :
Saratov State Tech. Univ., Russia
Abstract :
The 7-th order MESFET model to calculate intermodulation distortions up to 5-th order inclusively is offered. The identification of model parameters is realized on the basis of measurements the transfer characteristics. Comparison of calculation the MESFET transfer characteristic by 5-th and 7-th order models is carried out.
Keywords :
Schottky gate field effect transistors; intermodulation distortion; semiconductor device models; MESFET; high-order nonlinear distortion model; intermodulation distortion; transfer characteristics; Distortion measurement; Gallium arsenide; Helium; Intermodulation distortion; MESFETs; Nonlinear distortion;
Conference_Titel :
Actual Problems of Electron Devices Engineering, 2002. (APEDE 2002). Fifth International Conference on
Conference_Location :
Saratova, Russia
Print_ISBN :
5-7433-1065-3
DOI :
10.1109/APEDE.2002.1044898
