Title :
Scanning of laser radiation by decreasing cross-section current in narrow-zone semiconductors
Author :
Antonov, V.V. ; Koshkarov, F.N.
Author_Institution :
Saratov State Tech. Univ., Russia
Abstract :
In work process of scanning of laser radiation of the IK-range is investigated at temperature-electric instability narrow-zone the semiconductor n-InSb. During an experimental research the good coordination with theoretical conclusions that allows to use effect temperature-electric instability for creation highly effective deflector and scanners laser radiation with interval about 10,6-10,9 minute width is received.
Keywords :
III-V semiconductors; indium compounds; laser beam effects; narrow band gap semiconductors; InSb; cross-section current; laser radiation deflection; laser radiation scanning; n-InSb; narrow band gap semiconductor; temperature-electric instability; Laser theory; Semiconductor lasers;
Conference_Titel :
Actual Problems of Electron Devices Engineering, 2002. (APEDE 2002). Fifth International Conference on
Conference_Location :
Saratova, Russia
Print_ISBN :
5-7433-1065-3
DOI :
10.1109/APEDE.2002.1044899
