Title :
Highly reliable GaInAs/GaInP 0.98 /spl mu/m window laser
Author :
Hashimoto, J.-I. ; Ikoma, N. ; Murata, M. ; Katsuyama, T.
Author_Institution :
Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan
Abstract :
A GaInAs-GaInP 0.98 /spl mu/m window strained SQW laser was fabricated for the first time using a selective nitrogen ion implantation and a subsequent annealing. Remarkable tolerances to a catastrophic optical destruction (COD) and an internal degradation have been obtained.
Keywords :
III-V semiconductors; annealing; gallium arsenide; gallium compounds; indium compounds; infrared sources; ion implantation; laser reliability; laser transitions; optical fabrication; quantum well lasers; 0.98 mum; COD; GaInAs-GaInP; GaInAs-GaInP 0.98 /spl mu/m window strained SQW laser fabrication; catastrophic optical destruction; highly reliable GaInAs/GaInP 0.98 /spl mu/m window laser; internal degradation; selective nitrogen ion implantation; subsequent annealing; Aging; Annealing; Degradation; Fiber lasers; Ion implantation; Laser stability; Life testing; Nitrogen; Pump lasers; Quantum well lasers;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734171
