Title :
High-performance, reliable, 730 nm-emitting Al-free active region diode lasers
Author :
Al-Muhanna, A. ; Wade, J.K. ; Earles, T. ; Mawst, L.J. ; Fu, R.J.
Author_Institution :
Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA
Abstract :
Compressively-strained InGaAsP QW active (/spl lambda/=732 nm) diode lasers achieve 2.4 W CW front-facet power from 100 /spl mu/m-wide apertures, with reliable operation at 0.5 W CW. Record-high characteristic temperatures for the threshold current and the differential quantum efficiency, T/sub 0/=115 K and T/sub 1/=285 K are obtained by growing on misoriented substrates.
Keywords :
Debye temperature; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser reliability; laser transitions; quantum well lasers; semiconductor device reliability; 0.5 W; 100 mum; 115 K; 2.4 W; 285 K; 730 nm; 730 nm-emitting Al-free active region diode lasers; 732 nm; CW front-facet power; InGaAsP; InGaAsP QW active diode lasers; characteristic temperatures; compressively-strained; differential quantum efficiency; high-performance lasers; misoriented substrates; reliable operation; threshold current; Apertures; Diode lasers; Electrons; Photonics; Power generation; Reliability engineering; Surface emitting lasers; Temperature; Thermal management; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734175
