Title :
InGaAsN laser structures and LEDs at 1.3 /spl mu/m grown on GaAs substrate by AP-MOVPE
Author :
Bouchoule, S. ; Ougazzaden, S. ; Mereuta, A. ; Sermage, B. ; Pierre, B. ; Boulet, P.
Abstract :
We report on experimental characterisation of long wavelength InGaAsN semiconductor structures grown on GaAs substrate for optoelectronic applications. The InGaAsN/GaAs structures were grown by AP-MOCVD, using DMHY and TBAs. GaAs:n/InGaAsN/GaAs:p Fabry-Perot laser diodes were processed from the wafers, and stimulated emission was observed under electrical injection at peak wavelength from 1.15 /spl mu/m to 1.38 /spl mu/m. Laser operation was achieved at quasi-room temperature (10/spl deg/C) for the 1.16 /spl mu/m and 1.275 /spl mu/m laser structures.
Keywords :
Fabry-Perot resonators; III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; laser beams; light emitting diodes; optical fabrication; photoluminescence; semiconductor heterojunctions; semiconductor lasers; stimulated emission; vapour phase epitaxial growth; 1.15 to 1.38 mum; 1.16 mum; 1.275 mum; 1.3 mum; 10 C; AP-MOCVD; AP-MOVPE; GaAs; GaAs substrate; InGaAsN; InGaAsN laser structures; InGaAsN-GaAs; InGaAsN/GaAs structures; LEDs; electrical injection; laser operation; laser structures; long wavelength InGaAsN semiconductor structures; n-GaAs/InGaAsN/p-GaAs Fabry-Perot laser diode; optoelectronic applications; peak wavelength; quasi-room temperature; stimulated emission; Fiber lasers; Gallium arsenide; Laser modes; Light emitting diodes; Optical coupling; Power generation; Power lasers; Pump lasers; Substrates; Temperature measurement;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734202
