Title :
Experimental definition of constants a deformation potential n- and p-silicon
Author :
Scvortcov, A.A. ; Litvinenko, O.V.
Author_Institution :
Ulyanovsk State Univ., Simbirsk, Russia
Abstract :
At deformation of semiconducting chips the deformation change of energy charge carriers is determined by value constants of a deformation potential. These constants play an essential role in the description of kinetic effects, but the finding of their numerical values introduces considerable difficulties and frequently has evaluation nature. Therefore given activity is dedicated to experimental definition of some constants of a deformation potential in single-crystal silicon.
Keywords :
electron-phonon interactions; elemental semiconductors; silicon; Si; charge carrier energy; deformation potential; kinetic effects; semiconducting chip; single-crystal silicon; Charge carriers; Kinetic theory; Semiconductivity; Silicon;
Conference_Titel :
Actual Problems of Electron Devices Engineering, 2002. (APEDE 2002). Fifth International Conference on
Conference_Location :
Saratova, Russia
Print_ISBN :
5-7433-1065-3
DOI :
10.1109/APEDE.2002.1044938
