Single mode and stable polarization InGaAs/GaAs surface emitting laser grown on GaAs [311]B substrate

Author

Nishiyama, N. ; Mizutani, A. ; Hatori, N. ; Koyama, F. ; Iga, K.

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Japan

fYear

1998

fDate

4-8 Oct. 1998

Firstpage

233

Lastpage

234

Abstract

We demonstrate a completely single-mode and single-polarization operations of a InGaAs/GaAs vertical-cavity surface emitting laser (VCSEL) grown on a GaAs [311]B substrate. The device operates in a single transverse and longitudinal mode, with stable polarization state in the entire tested current range.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser beams; laser cavity resonators; laser modes; optical fabrication; semiconductor lasers; surface emitting lasers; GaAs; GaAs [311]B substrate; InGaAs-GaAs; InGaAs/GaAs; fabrication; longitudinal mode; single mode laser; single transverse mode; single-mode operations; single-polarization operations; stable polarization laser; stable polarization state; surface emitting laser; vertical-cavity surface emitting laser; Apertures; Distributed Bragg reflectors; Gallium arsenide; Indium gallium arsenide; Laser modes; Laser stability; Optical noise; Optical polarization; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Conference_Location

Nara, Japan

ISSN

0899-9406

Print_ISBN

0-7803-4223-2

Type

conf

DOI

10.1109/ISLC.1998.734220

Filename

734220