Title :
Electron trapping: An unexpected mechanism of NBTI and its implications
Author :
Campbell, J.P. ; Cheung, K.P. ; Suehle, J.S. ; Oates, A.
Author_Institution :
Div. of Semicond. Electron., NIST, Gaithersburg, MD
Abstract :
In this work, we demonstrate that electron trapping has been overlooked in previous studies and will greatly impact the current understanding of the NBTI phenomenon and consequent lifetime predictions.
Keywords :
CMOS integrated circuits; electron traps; integrated circuit reliability; NBTI; electron trapping; lifetime predictions; negative bias temperature instability; Charge carrier processes; Degradation; Electron traps; Interface states; Niobium compounds; Pulse measurements; Stress; Time measurement; Titanium compounds; Voltage;
Conference_Titel :
VLSI Technology, 2008 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-1802-2
Electronic_ISBN :
978-1-4244-1803-9
DOI :
10.1109/VLSIT.2008.4588568
