Title :
Self-sustained pulsation at 65/spl deg/C through reduced carrier overflow in AlGaInP laser diodes
Author :
Sawano, H. ; Hotta, H. ; Kobayashi, R. ; Ohsawa, Y. ; Kobayashi, K.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
Self-sustained pulsation operation of AlGaInP laser diodes at up to 65/spl deg/C was obtained. This was achieved by suppressing the carrier overflow, which was confirmed by analyzing the luminescence change brought about by inducing strain in the wells of the active and saturable-absorbing layers.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium compounds; indium compounds; optical films; optical saturable absorption; photoluminescence; quantum well lasers; 65 C; AlGaInP; AlGaInP laser diodes; active quantum well layer strain; luminescence change; reduced carrier overflow; saturable-absorbing layers; self-sustained pulsation; self-sustained pulsation operation; Capacitive sensors; Carrier confinement; Diode lasers; Frequency; Luminescence; Optical feedback; Optical noise; Photonic band gap; Tellurium; Temperature;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734232
