Embedded split-gate flash memory with silicon nanocrystals for 90nm and beyond

Author

Chindalore, Gowrishankar ; Yater, Jane ; Gasquet, Horacio ; Suhail, Mohammed ; Kang, Sung-Taeg ; Hong, Cheong Min ; Ellis, Nicole ; Rinkenberger, Glenn ; Shen, James ; Herrick, Matthew ; Malloch, Wendy ; Syzdek, Ronald ; Baker, Kelly ; Chang, Ko-Min

Author_Institution

Technol. Solutions Organ., Freescale Semicond., Inc., Austin, TX

fYear

2008

fDate

17-19 June 2008

Firstpage

136

Lastpage

137

Abstract

We present a split-gate based NOR flash memory array with silicon nanocrystals as the storage medium. 128 KB memory arrays have been evaluated with this technology and the results presented here show a nanocrystal memory that has been demonstrated to achieve a minimum 1.5 V operating window that is maintained through 10 K program/erase cycles; well controlled array threshold distributions; fast source-side injection programming (10-20 us); fast tunnel erase into the gate; and robust high temperature data retention for both uncycled and cycled arrays. Results presented here with focus on the array operation demonstrate the maturity of this technology for implementation into consumer, industrial, and automotive microcontrollers.

Keywords

NOR circuits; flash memories; integrated memory circuits; memory architecture; microcontrollers; nanostructured materials; nanotechnology; NOR flash memory array; array threshold distributions; automotive microcontrollers; consumer microcontrollers; data retention; industrial microcontrollers; nanocrystal memory; size 90 nm; source side injection programming; time 10 mus to 20 mus; tunnel erase; voltage 1.5 V; Dielectrics; Flash memory; Microcontrollers; Nanocrystals; Nonvolatile memory; Robust control; Silicon; Split gate flash memory cells; Temperature control; Temperature distribution; Data Retention; Endurance; Flash Memories; Memory Array; Microcontrollers; Nanocrystals; Source-side Injection; Tunnel Erase;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2008 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-1802-2

Electronic_ISBN

978-1-4244-1803-9

Type

conf

DOI

10.1109/VLSIT.2008.4588592

Filename

4588592