DocumentCode
241535
Title
Properties of directly electroplated copper on CoMo alloy diffusion barrier
Author
Xu Wang ; Hyunsuk Kim ; Xin-Ping Qu
Author_Institution
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
fYear
2014
fDate
28-31 Oct. 2014
Firstpage
1
Lastpage
3
Abstract
The properties of directly electroplated Cu on CoMo alloy diffusion barrier were analyzed by FPP, XRD and SEM. Comparison was made between electroplated Cu on CoMo with and without a seed layer. Also, the self-annealing behaviors of both direct electroplated Cu on CoMo and Cu/CoMo were investigated further. Due to the self-annealing process, the defects of directly electroplated Cu on CoMo are recovered resulting in a less resistance difference value between electrochemical deposited (ECD) Cu on CoMo and ECD Cu on Cu/CoMo.
Keywords
X-ray diffraction; annealing; cobalt alloys; copper; diffusion barriers; electric resistance; electroplating; metallic thin films; molybdenum alloys; scanning electron microscopy; two-dimensional spectra; CoMo alloy diffusion barrier; Cu-CoMo; FPP; SEM; XRD; directly electroplated copper; electrochemical deposited copper; four-point probe; resistance difference value; seed layer; self-annealing process; Abstracts; Films; Hafnium; Resistance; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4799-3296-2
Type
conf
DOI
10.1109/ICSICT.2014.7021188
Filename
7021188
Link To Document