• DocumentCode
    241535
  • Title

    Properties of directly electroplated copper on CoMo alloy diffusion barrier

  • Author

    Xu Wang ; Hyunsuk Kim ; Xin-Ping Qu

  • Author_Institution
    State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The properties of directly electroplated Cu on CoMo alloy diffusion barrier were analyzed by FPP, XRD and SEM. Comparison was made between electroplated Cu on CoMo with and without a seed layer. Also, the self-annealing behaviors of both direct electroplated Cu on CoMo and Cu/CoMo were investigated further. Due to the self-annealing process, the defects of directly electroplated Cu on CoMo are recovered resulting in a less resistance difference value between electrochemical deposited (ECD) Cu on CoMo and ECD Cu on Cu/CoMo.
  • Keywords
    X-ray diffraction; annealing; cobalt alloys; copper; diffusion barriers; electric resistance; electroplating; metallic thin films; molybdenum alloys; scanning electron microscopy; two-dimensional spectra; CoMo alloy diffusion barrier; Cu-CoMo; FPP; SEM; XRD; directly electroplated copper; electrochemical deposited copper; four-point probe; resistance difference value; seed layer; self-annealing process; Abstracts; Films; Hafnium; Resistance; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021188
  • Filename
    7021188