• DocumentCode
    241536
  • Title

    Effect of glycine on CMP process of molybdenum

  • Author

    Hui Feng ; Li-Ao Cao ; Xin-Ping Qu

  • Author_Institution
    State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The effect of glycine on CMP of Mo using H2O2 based alkaline slurry is investigated. It is found that both removal rate (RR) and static etch rate(SER)decrease after adding glycine into the alkaline slurry. Higher concentration of glycine results in a lower RR. The in-situ OCP experiment results reveal that after adding glycine into the slurry, the chemical reaction becomes weaker and less amount of oxide forms. The mechanism of glycine´s inhibition to CMP of Mo is due to physical adsorption between the glycine molecule and the Mo surface.
  • Keywords
    chemical mechanical polishing; chemical reactions; molybdenum; organic compounds; slurries; CMP process; H2O2; Mo; alkaline slurry; chemical reaction; glycine inhibition; glycine molecule; molybdenum; physical adsorption; removal rate; static etch rate; Abstracts;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021189
  • Filename
    7021189
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=241536