A novel RF switch device using InGaAs MOSFET technology

Author

Jiahui Zhou ; Hudong Chang ; Xufang Zhang ; Jingzhi Yang ; Zhenhua Zeng ; Xu Yang ; Honggang Liu ; Simin Li ; Qi Li ; Wenjun Xu ; Haiou Li

Author_Institution

Guangxi Exp. Center of Inf. Sci., Guilin Univ. of Electron. Technol., Guilin, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

In this paper, a novel InGaAs metal oxide semiconductor field effect transistor (MOSFET) radio frequency (RF) switch device is demonstrated. The MOSFET RF switch device with 0.3 μm gate length and 10 nm Al₂O₃ as gate dielectric shows insertion loss of 0.3 dB and isolation of more than 50 dB. A maximum drain current of 250 mA/mm, a peak transconductance of 370 mS/mm, a turn-on resistance of 2.4 O·mm and a drain current on-off (I_on/I_off) ratio of over 1×10⁶ are obtained. The small signal models of this MOSFET switch device are also described. Excellent agreement between measured and simulated demonstrates the validity of this model.

Keywords

III-V semiconductors; aluminium compounds; field effect transistor switches; indium compounds; microswitches; microwave switches; radiofrequency integrated circuits; Al₂O₃; InGaAs; MOSFET RF switch device; MOSFET technology; drain current; gate dielectric; insertion loss; metal oxide semiconductor field effect transistor; radio frequency switch device; signal models; size 0.3 mum; size 10 nm; Insertion loss; Logic gates; Loss measurement; MOSFET; Radio frequency; Switches; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021191

Filename

7021191