DocumentCode
241566
Title
Toward 0.1V operation of MOSFETs for ultra-low power applications
Author
Hiramoto, Toshiro ; Ueda, Akitsugu ; Seung-Min Jung ; Mizutani, Tomoko ; Saraya, Takuya
Author_Institution
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
fYear
2014
fDate
28-31 Oct. 2014
Firstpage
1
Lastpage
4
Abstract
For the ultra-low voltage operation as low as 0.1V, a new device concept, Vth self-adjusting MOSFETs with floating gate (FG), is proposed and experimentally demonstrated. The charges are injected to/from FG and Vth increases at the off-state while Vth decreases at the on-state resulting in higher on/off ratio and stable circuit operation at ultra-low voltage. The Vth adjustment as well as improved SRAM cell stability at 0.1V is successfully demonstrated.
Keywords
MOSFET; SRAM chips; low-power electronics; FG; Vth self-adjusting MOSFET; circuit stability; floating gate; improved SRAM cell stability; ultralow power application; voltage 0.1 V; Abstracts; CMOS integrated circuits; MOSFET circuits; Random access memory; Substrates; Velocity measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4799-3296-2
Type
conf
DOI
10.1109/ICSICT.2014.7021206
Filename
7021206
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