Title :
Design of a silicon carbide CMOS power OPAMP for stable operation at elevated temperatures
Author :
Chen, Jian-Song ; Kornegay, Kevin T.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
A class AB silicon carbide CMOS power operational amplifier with stable open-loop voltage gain over a wide temperature range is presented. A bias circuit is provided to make the voltage gain of the operational amplifier insensitive to threshold voltage and mobility variations. A class AB output stage combined with a novel adaptive biasing scheme is developed to produce a full-rail-to-rail output swing and a low output resistance. A nested Miller compensated topology is also incorporated to provide a phase margin of 68°. The DC gain of the operational amplifier only experiences a 0.51 dB variation over a temperature range of 25°C to 300°C and a 7.22 dB variation from VDD=32 V to VDD=100 V. This operational amplifier is ideal for use as a voltage buffer or power amplifier intended for high temperature operation
Keywords :
CMOS analogue integrated circuits; high-temperature techniques; operational amplifiers; power amplifiers; semiconductor materials; silicon compounds; 25 to 300 C; 32 to 100 V; SiC; adaptive bias circuit; class AB silicon carbide CMOS power operational amplifier; high temperature operation; nested Miller compensation; open-loop voltage gain; voltage buffer; Circuit analysis; High power amplifiers; Operational amplifiers; Silicon carbide; Temperature dependence; Temperature distribution; Temperature sensors; Thermal conductivity; Threshold voltage; Virtual reality;
Conference_Titel :
Circuits and Systems, 1997. ISCAS '97., Proceedings of 1997 IEEE International Symposium on
Print_ISBN :
0-7803-3583-X
DOI :
10.1109/ISCAS.1997.608646
