Silicon-migration technology for MEMS-CMOS monolithic integration

Author

Fan Zeng ; Man Wong

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

A scheme for the monolithic integration of complementary metal-oxide-semiconductor (CMOS) circuits and microelectromechanical systems (MEMS) based on the silicon-migration technology (SiMiT) is developed. The process-incompatibility issues inherently present in traditional integration schemes are largely avoided by the elimination of the sacrificial layer etch. This pre-CMOS integration scheme is demonstrated using a 16×16 active-matrix tactile sensor “addressed” with an integrated ring counter.

Keywords

CMOS integrated circuits; electromigration; elemental semiconductors; micromechanical devices; monolithic integrated circuits; silicon; MEMS-CMOS monolithic integration; Si; active-matrix tactile sensor; complementary metal-oxide-semiconductor; microelectromechanical systems; silicon-migration technology; Arrays; CMOS integrated circuits; Cavity resonators; Micromechanical devices; Radiation detectors; Silicon; Tactile sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021216

Filename

7021216