Time-dependent device-to-device variation accounting for within-device fluctuation (TVF): A new characterization technique

When nanometer-sized devices are subjected to identical stresses, their degradation has a statistical spread, resulting in a time-dependent device-to-device variation (TDDV). The variation has two sources: charging fluctuation for a given number and location of defects and a variation in defect numbers and locations for different devices. The existing measurement techniques do not separate these two and can underestimate the aging by not capturing all defects. There is a need for a new technique that can characterize the true TDDV. This work reviews the recently proposed technique that can characterize the TDDV by properly accounting the within-a-device charge Fluctuation (TVF). This is achieved by monitoring the degradation of drain current on-the-fly.