Title :
Multilevel resistive switching in HfOx/TiOx/HfOx/TiOx multilayer-based RRAM with high reliability
Author :
Wenjia Ma ; Lifeng Liu ; Yiran Wang ; Zhe Chen ; Bing Chen ; Bin Gao ; Xiaoyan Liu ; Jinfeng Kang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
Multilevel cell (MLC) characteristics of HfOx/TiOx/HfOx/TiOx multilayer -based RRAM were studied for the data storage application. The multilevel resistive switching operation was obtained by controlling the reset pulse voltage of the multilayer-based RRAM. We have demonstrated 8-level resistive switching behavior. The reliability of the MLC operation has been examined, about 104 s of data retention at 150 °C is achieved, Sufficient window margin is achieved even the HRS decreases with the increasing temperature from 30 to 150°C.
Keywords :
hafnium compounds; integrated circuit reliability; multilayers; resistive RAM; titanium compounds; HfOx-TiOx-HfOx-TiOx; high reliability RRAM; multilayer based RRAM; multilevel cell; multilevel resistive switching; reset pulse voltage; temperature 150 C; Abstracts; Generators; Hafnium compounds; Reliability; Switches; Voltage control;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021236
