Title :
Project on an electrically reprogrammable fast read-out memory using bipolar tetrode transistors
Author :
Dom, J.P. ; Roux, Ph ; Aucouturier, J.L. ; Depey, M.
Author_Institution :
Univ. de Bordeaux 1, Talence, France
Abstract :
This paper presents a project on an electrically reprogrammable memory system in which the control of the avalanche degradation of the H of bipolar tetrode transistor is executed by the gate voltage. The design of a type REPROM with 1024 bits capacity having an access time better than 100 ns for a total power of 500 mW is attempted.
Keywords :
EPROM; bipolar transistors; REPROM; avalanche degradation; bipolar tetrode transistors; electrically reprogrammable fast read-out memory; power 500 mW; word length 1024 bit; Avalanche breakdown; Bipolar transistors; Circuits; Control systems; Degradation; Hot carriers; Logic arrays; Switches; Voltage control;
Conference_Titel :
Solid State Circuits Conference, 1976. ESSCIRC 76. 2nd European
Conference_Location :
Toulouse
DOI :
10.1109/ESSCIRC.1976.5469100
