Investigation of terahertz plasma oscillations in nano-scaled double-gate MOSFETs by Monte Carlo method

Author

Juncheng Wang ; Gang Du ; Xiaoyan Liu

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

In this paper, we investigate the terahertz plasma oscillations in nano-scaled double-gate n-type Silicon MOSFET with 2D ensemble Monte Carlo simulation method. The effects of the drain-to-source biases, gate-to-source biases and doping levels in the source/drain regions of the devices on the terahertz plasma oscillations are considered. The relation between terahertz plasma oscillations and the channel scaling in double-gate MOSFET is also discussed. The oscillation frequency peak value as a function of doping levels exhibits a good agreement with the predictions of 2D plasma frequency.

Keywords

MOSFET; Monte Carlo methods; elemental semiconductors; nanostructured materials; plasma oscillations; semiconductor doping; silicon; submillimetre wave transistors; 2D ensemble Monte Carlo simulation method; 2D plasma frequency prediction; Si; channel scaling; doping level; drain-to-source bias; gate-to-source bias; nanoscaled double-gate n-type MOSFET; source-drain region; terahertz plasma oscillation; Abstracts; Dielectrics; Doping; Frequency control; Logic gates; MOSFET circuits; Noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021315

Filename

7021315