Novel CMOS SRAM voltage latched sense amplifiers design based on 65 nm technology

A novel voltage latched sense amplifier is proposed in this paper. It applies a self-closing bit-line module technique, which makes the input and output nodes separated to optimize sensing delay and power consumption. Initially, the size of transistors in the circuits is adjusted to speed up the circuit and lower the power. The simulation results show that the proposed design improves sensing when smaller bit-lines difference requires for full-swing amplification as the conventional voltage latched sense amplifier. The proposed design also improves power efficiency at least 30% as compared to the conventional voltage latched sense amplifier.