Title :
Simulation of the RRAM based Nonvolatile SRAM cell
Author :
Yang Zheng ; Peng Huang ; Haitong Li ; Xiaoyan Liu ; Jinfeng Kang ; Gang Du
Author_Institution :
Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
Abstract :
This work investigates the performance of RRAM based Non-Volatile SRAM (NV-SRAM) cells. The architecture of NV-SRAM includes a 6T SRAM cell and a couple of one transistor-one resistive memory devices configuration. RRAM is controlled by MOSFETs in 1T1R configuration. The performance of NV-SRAM cell is investigated by circuit simulation with a SPICE compact model of oxide-based resistive random access memory based on the conductive filament evolution model.
Keywords :
MOSFET; SPICE; SRAM chips; circuit simulation; resistive RAM; 1T1R configuration; 6T SRAM cell; MOSFET; RRAM based NV-SRAM cells; RRAM based nonvolatile SRAM cells; SPICE compact model; circuit simulation; conductive filament evolution model; one transistor-one resistive memory devices configuration; oxide-based resistive random access memory; Integrated circuit modeling; Nonvolatile memory; Performance evaluation; SRAM cells; Semiconductor device modeling; Transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021372
