DocumentCode :
241910
Title :
Impact of peald AlN interfacial passivation layer on thin barrier AlGaN/GaN HEMTs
Author :
Xin Tan ; Yuanjie Lv ; Shaobo Dun ; Guodong Gu ; Zhihong Feng
Author_Institution :
Nat. Key Lab. of ASIC, Hebei Semicond. Res. Inst., Shijiazhuang, China
fYear :
2014
fDate :
28-31 Oct. 2014
Firstpage :
1
Lastpage :
3
Abstract :
Two passivation techniques were applied on AlGaN/GaN high electron-mobility transistors (HEMTs) with thin barrier thickness (12 nm). 5 nm AlN interfacial passivation layer was deposited by plasma enhanced atomic layer deposition (PEALD) before 50 nm SiN protection layer grown by plasma enhanced chemical vapor deposition (PECVD). Compared with traditional SiN passivation, the insertion of AlN could suppress current collapse more effectively, and showed better characteristics such as smaller subthreshold slope (SS), lower drain induced barrier lower (DIBL), higher drain current and larger transconductance. Moreover, the DC-pulse curves showed that the channel self-heating effects were obviously alleviated due to the good heat spreading performance of AlN layer.
Keywords :
III-V semiconductors; aluminium compounds; atomic layer deposition; gallium compounds; high electron mobility transistors; passivation; plasma CVD; silicon compounds; AlGaN; AlN; DC-pulse curves; HEMT; PEALD; PECVD; SiN; channel self-heating effects; high electron-mobility transistors; interfacial passivation layer; plasma enhanced atomic layer deposition; plasma enhanced chemical vapor deposition; protection layer growth; size 12 nm; size 5 nm; size 50 nm; thin barrier thickness; Abstracts; Application specific integrated circuits; Atomic layer deposition; Epitaxial growth; Gallium nitride; Laboratories; Silicon compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
Type :
conf
DOI :
10.1109/ICSICT.2014.7021381
Filename :
7021381
Link To Document :
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