Title :
High performance Ge-pMOSFET integrated on Si platform
Author :
Wang, S.K. ; Yang, Xu ; Gong, Z. ; Liang, Robert ; Sun, B. ; Zhao, Wanfang ; Chang, H. ; Wang, Jiacheng ; Liu, H.G.
Author_Institution :
Microwave Devices & IC Dept., Inst. of Microelectron., Beijing, China
Abstract :
Hetero-integration of high mobility Ge pMOSFET on Si platform is successfully demonstrated in this paper. Fully relaxed high-quality Ge is grown on Si by a two-step epitaxy method. By controlling the high-k/Ge interface passivation technique using ozone treatment, high performance Ge-pMOSFET on Si(100) substrate with a peak mobility of 524 cm2/Vs and an Ion/Ioff ratio of >104 is obtained. This work presents a good solution for high-mobility pMOSFETs in future technology node.
Keywords :
MOSFET; elemental semiconductors; epitaxial growth; germanium; high-k dielectric thin films; ozonation (materials processing); passivation; silicon; Ge; Si; Si platform; hetero-integration; high mobility Ge pMOSFET; high-k/Ge interface passivation technique; high-mobility pMOSFET; ozone treatment; two-step epitaxy method; Abstracts; Capacitance-voltage characteristics; Epitaxial growth; Logic gates; MOSFET; MOSFET circuits; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021385
