Predictive simulation of future CMOS technologies and their impact on circuits

Author

Asenov, Asen ; Cheng, Binjie ; Adamu-Lema, F. ; Shifren, L. ; Sinha, S. ; Riddet, C. ; Alexander, C. ; Brown, A.R. ; Wang, Xiongfei ; Amoroso, Salvatore Maria

Author_Institution

Gold Stand. Simulations Ltd., Glasgow, UK

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

We study the technology and process choices, namely Si vs. Ge PMOS FinFETs, and channel-doping approach for threshold voltage (V_TH) control of FinFETs, at advanced technology nodes by using full-band ensemble Monte Carlo (EMC) and calibrated `atomistic´ Drift-Diffusion (DD) simulations. The simulation results indicate that Ge is not an ideal candidate for channel material replacement of pMOS in future low-power CMOS technologies. The impact of the channel doping approach (employed for VTH control) on overall statistical variability of FinFETs is strongly dependent on the magnitude of Fin width variation.

Keywords

CMOS integrated circuits; MOSFET; Monte Carlo methods; low-power electronics; DD simulations; EMC simulations; Fin width variation; PMOS FinFET; advanced technology nodes; calibrated atomistic drift-diffusion simulations; channel material replacement; channel-doping approach; full-band ensemble Monte Carlo simulations; low-power CMOS technologies; predictive simulation; statistical variability; threshold voltage control; Calibration; Doping; Electromagnetic compatibility; FinFETs; Logic gates; Predictive models; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021423

Filename

7021423