Title :
The avenue of FDSOI radiation hardening
Author :
Kai Zhao ; Zhongli Liu ; Fang Yu
Author_Institution :
Inst. of Microelectron., Beijing, China
Abstract :
Advanced FDSOI technology has inherent resistance to transient ionizing radiation effects and better Single Event Effect (SEE) tolerance. In the meantime, total dose hardening is now the biggest challenging for the cutting-edge FDSOI technology. Three TID hardening techniques are discussed in this paper. The effects of buried oxide modification, device structure innovation and biased Double SOI methods are shown and compared in detail. This discussion describes the most promising avenue to radiation hardened FDSOI devices and circuits.
Keywords :
CMOS integrated circuits; radiation hardening (electronics); silicon-on-insulator; CMOS technology; FDSOI radiation hardening; biased double SOl methods; buried oxide modification; device structure innovation; fully depleted silicon on insulator; total ionizing dose radiation effects; Abstracts; Field programmable gate arrays; MOS devices; Radiation hardening (electronics); Random access memory; Substrates; Transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021436
