DocumentCode
242019
Title
The avenue of FDSOI radiation hardening
Author
Kai Zhao ; Zhongli Liu ; Fang Yu
Author_Institution
Inst. of Microelectron., Beijing, China
fYear
2014
fDate
28-31 Oct. 2014
Firstpage
1
Lastpage
3
Abstract
Advanced FDSOI technology has inherent resistance to transient ionizing radiation effects and better Single Event Effect (SEE) tolerance. In the meantime, total dose hardening is now the biggest challenging for the cutting-edge FDSOI technology. Three TID hardening techniques are discussed in this paper. The effects of buried oxide modification, device structure innovation and biased Double SOI methods are shown and compared in detail. This discussion describes the most promising avenue to radiation hardened FDSOI devices and circuits.
Keywords
CMOS integrated circuits; radiation hardening (electronics); silicon-on-insulator; CMOS technology; FDSOI radiation hardening; biased double SOl methods; buried oxide modification; device structure innovation; fully depleted silicon on insulator; total ionizing dose radiation effects; Abstracts; Field programmable gate arrays; MOS devices; Radiation hardening (electronics); Random access memory; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4799-3296-2
Type
conf
DOI
10.1109/ICSICT.2014.7021436
Filename
7021436
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