Title :
a-IGZO thin film transistors with channel layer deposited at room temperature and 250°C
Author :
Wei Deng ; Xin He ; Xiang Xiao ; Ling Wang ; Weizhi Meng ; Shengdong Zhang
Author_Institution :
Sch. of Electron. Eng. & Comput. Sci., Peking Univ., Beijing, China
Abstract :
The a-IGZO thin film transistors with channel layer deposited at room temperature and 250°C are fabricated in this work. Results show the TFTs with IGZO film deposited at 250°C have lower threshold voltage, higher carrier mobility, and better sub-threshold slope than that with IGZO film deposited at room temperature. X-ray photoelectron spectroscopy measurement shows the proportion of Indium atoms in the IGZO film deposited at 250°C is higher than at room temperature.
Keywords :
X-ray photoelectron spectra; carrier mobility; gallium compounds; indium compounds; thin film transistors; zinc compounds; InGaZnO; TFT; X-ray photoelectron spectroscopy measurement; XPS; carrier mobility; channel layer; subthreshold slope; temperature 250 degC; temperature 293 K to 298 K; thin film transistors; threshold voltage; Films; Logic gates; Plasma temperature; Substrates; Temperature; Temperature measurement; Thin film transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021453
