DocumentCode
242104
Title
Transient simulation of nano-scale UTBB nmosfets by deterministically solving BTE
Author
Shao-yan Dia ; Kai Zhao ; Tiao Lu ; Gang Du ; Xiao-yan Liu
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
fYear
2014
fDate
28-31 Oct. 2014
Firstpage
1
Lastpage
3
Abstract
The transient response to the drain voltage of a nano scale Ultra-Thin Body and BOX (UTBB) nMOSFET are investigated by deterministically solving the time dependent Boltzmann Transport Equation (BTE). The relaxation process of subbands profile, electron density and current is investigated. The relaxation time of the device is about 0.1ps at typical biases, which is several times larger than the electron transit time.
Keywords
MOSFET; transient response; BTE; device relaxation time; drain voltage; electron density; electron transit time; nano-scale UTBB nMOSFET; nanoscale ultrathin body-box nMOSFET; subband profile relaxation process; transient response; transient simulation; Abstracts; Acceleration; Educational institutions; Logic gates; MOSFET circuits; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location
Guilin
Print_ISBN
978-1-4799-3296-2
Type
conf
DOI
10.1109/ICSICT.2014.7021479
Filename
7021479
Link To Document