DC and RF characteristics study of MIM capacitors with various Al2O3 thicknesses

Author

Jiahui Zhou ; Hudong Chang ; Xufang Zhang ; Zhenhua Zeng ; Xu Yang ; Haiou Li ; Honggang Liu

Author_Institution

Microwave Device & IC Dept., Inst. of Microelectron., Beijing, China

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

Metal-insulator-metal (MIM) capacitors with atomic layer deposited (ALD) various Al₂O₃ thicknesses are investigated for radio frequency integrated circuit (RFIC) applications. For 20 nm Al₂O₃, the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm² and acceptable voltage coefficients of capacitance (VCCs) of 681 ppm/V² and 134 ppm/V at 1 MHz. An outstanding VCCs of 74 ppm/V² and 55 ppm/V is obtained by 100 nm thickness Al₂O₃ MIM capacitors. The impact of various dielectric thicknesses on RF characteristics such as Q factors and resonance frequency is also investigated. Moreover, a simplified small signal model of the MIM capacitors is described. Excellent agreement between measured and simulated data demonstrates the validity of this model.

Keywords

MIM devices; Q-factor; aluminium compounds; atomic layer deposition; capacitors; dielectric materials; integrated circuit modelling; radiofrequency integrated circuits; ALD; Al₂O₃; MIM capacitors; Q factors; RFIC; atomic layer deposition; capacitance density; dielectric thicknesses; frequency 1 MHz; metal-insulator-metal capacitors; radio frequency integrated circuit; resonance frequency; signal model; size 100 nm; size 20 nm; voltage coefficients; Aluminum oxide; Capacitance; Capacitors; MIM capacitors; Q-factor; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021494

Filename

7021494