Title :
New calibration method of analytical models for ion implantation
Author :
Roger, F. ; Scheiblin, P. ; Poncet, D. ; Le Carval, G. ; Laviron, C. ; Holliger, P. ; Guichard, E. ; Caire, J.P.
Author_Institution :
SILVACO, Gieres, France
Abstract :
We present an efficient and original methodology for global and predictive modeling of ion implantation. The doping profiles are fitted using a linear combination of Legendre Polynomials, which coefficients are expressed as a function of the main process parameters from Response Surface Methodology. A Design of Experiments, based on accurate SIMS measurements of dedicated implantation experiments, insures an optimal model calibration. This approach allows the easy generation of calibrated implanted profiles, using the experimental data available in each fab
Keywords :
Legendre polynomials; calibration; design of experiments; doping profiles; ion implantation; secondary ion mass spectra; semiconductor doping; semiconductor process modelling; Legendre polynomials; SIMS measurements; analytical models; calibrated implanted profiles; calibration method; design of experiments; doping profiles; global modeling; ion implantation; linear combination; optimal model calibration; predictive modeling; response surface methodology; Analytical models; CMOS technology; Calibration; Ion implantation; Polynomials; Predictive models; Response surface methodology; Semiconductor device modeling; Semiconductor process modeling; US Department of Energy;
Conference_Titel :
Statistical Metrology, 2000 5th International Workshop on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5896-1
DOI :
10.1109/IWSTM.2000.869302
