Title :
Etching of VOx thin film in HF solution
Author :
Rong-Hong Chen ; Yu-Long Jiang
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
In this paper, the etching of VOx thin film in the diluted HF solution is investigated. It´s revealed that the etching can effectively influence the film resistance but with a constant temperature coefficient of resistance (TCR). It is demonstrated that the metallic components in VOx film will be etched off and the TCR is highly related with the residual VO2 and V2O5 components, which can guide the TCR optimization for VOx based bolometer application.
Keywords :
electric resistance; etching; semiconductor materials; semiconductor thin films; vanadium compounds; TCR optimization; VOx; VOx based bolometer application; constant temperature coefficient-of-resistance; diluted HF solution; etching; film resistance; metallic components; residual V2O5 components; residual VO2 components; thin film; Abstracts; Etching; Films; HEMTs; Hafnium; Reliability; Resistance;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021508
