DocumentCode :
2421726
Title :
Improved simulation model for PD pattern in voids considering effects of discharge area
Author :
Wu, Kaijie ; Suzuoki, Y. ; Dissado, L.A.
Author_Institution :
Center for Integrated Res. in Sci. & Eng., Nagoya Univ., Japan
fYear :
2003
fDate :
19-22 Oct. 2003
Firstpage :
32
Lastpage :
35
Abstract :
An earlier model for simulation of the phase-resolved pattern of partial discharge (PD) showed that the range of PD magnitudes could be produced by a variation of discharge area. Here we present a further development of that model. When the field in the void exceeds a certain value Ec, PD occurs and extends along the void surface. In the PD propagation, the fields in the discharge paths and in the perimeter segments around the PD paths are reduced little by little by gradually changing the charge distribution. And the PD is terminated when the internal field in the PD path becomes lower than a critical value Ein and the field in the perimeter segments around the PD paths becomes less than another critical value Ep. The simulation results became much closer to the actual PD patterns. And the large fluctuation of PD magnitude can be simulated even without consideration of any stochastic mechanisms. This model provides an approach to explain the transition of PD pattern in the aging process in terms of the change of surface condition.
Keywords :
ageing; partial discharges; surface conductivity; surface discharges; voids (solid); PD pattern; aging process; discharge area; discharge paths; improved simulation model; partial discharge; perimeter; perimeter segments; phase-resolved pattern; void surface; voids; Aging; Electrodes; Fluctuations; Gas insulation; Partial discharges; Permittivity; Poisson equations; Stochastic processes; Surface discharges; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 2003. Annual Report. Conference on
Print_ISBN :
0-7803-7910-1
Type :
conf
DOI :
10.1109/CEIDP.2003.1254787
Filename :
1254787
Link To Document :
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