Influence of substrate on resistive switching behavior of YMnO3 films in bottom-top contact configuration

Author

Bogusz, Agnieszka ; Blaschke, Daniel ; Skorupa, Ilona ; Scholz, Andrea ; Burger, Danilo ; Schmidt, Oliver G. ; Schmidt, Heidemarie

Author_Institution

Inst. of Ion-Beam Phys. & Mater. Res., Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany

fYear

2014

fDate

28-31 Oct. 2014

Firstpage

1

Lastpage

3

Abstract

The influence of the bottom electrode/substrate on the resistive switching behavior of YMnO₃ thin films was investigated. Unipolar resistive switching was observed when Pt/Ti/SiO₂/Si and Pt/Al₂O₃ were employed as a bottom electrode/substrate. YMnO₃ deposited on a SrTiO₃ doped with Nb exhibits bipolar resistive switching characteristics. It was shown that the use of different substrate materials has got a decisive impact on the YMnO₃ microstructure and current-voltage characteristics.

Keywords

alumina; electrochemical electrodes; elemental semiconductors; memristors; platinum; pulsed laser deposition; semiconductor thin films; silicon; silicon compounds; strontium compounds; titanium; yttrium compounds; Nb:SrTiO₃; Pt-Al₂O₃; Pt-Ti-SiO₂-Si; YMnO₃; bipolar resistive switching characteristics; bottom electrode-substrate; bottom-top contact configuration; current-voltage characteristics; memristive devices; microstructure; nonvolatile RS; pulsed laser deposition; resistive switching behavior; substrate materials; thin films; Abstracts; Cryptography; Substrates; Temperature distribution; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on

Conference_Location

Guilin

Print_ISBN

978-1-4799-3296-2

Type

conf

DOI

10.1109/ICSICT.2014.7021530

Filename

7021530