• DocumentCode
    242209
  • Title

    Bipolar resistive switching behaviors in an Al/DLC/W structure

  • Author

    Jianlong Xu ; Dan Xie ; Pinggang Peng ; Xiaowen Zhang ; Tian-Ling Ren

  • Author_Institution
    Tsinghua Nat. Lab. for Inf. Sci. & Technol. (TNList), Tsinghua Univ., Beijing, China
  • fYear
    2014
  • fDate
    28-31 Oct. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We report the bipolar resistive switching behaviors of the Al/DLC/W structure. The fabricated device shows good memory performances with high ON/OFF ratio, long data retention time, good endurance and low operation voltage. The formed gas bubbles at the Al surface after repeated SET and RESET operations are found to arise from the oxygen vacancies by the formation of Al2O3 layer at the DLC/Al interface, which is also responsible for the resistive switching behaviors of the device.
  • Keywords
    aluminium compounds; bipolar memory circuits; diamond-like carbon; oxygen; resistive RAM; tungsten; Al-C-W; Al2O3; DLC; RRAM; bipolar resistive switching behaviors; data retention time; diamond-like carbon; gas bubbles; oxygen vacancies; resistive switching random access memory; Abstracts; Films; RNA; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
  • Conference_Location
    Guilin
  • Print_ISBN
    978-1-4799-3296-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2014.7021531
  • Filename
    7021531
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=242209