Title :
Bipolar resistive switching behaviors in an Al/DLC/W structure
Author :
Jianlong Xu ; Dan Xie ; Pinggang Peng ; Xiaowen Zhang ; Tian-Ling Ren
Author_Institution :
Tsinghua Nat. Lab. for Inf. Sci. & Technol. (TNList), Tsinghua Univ., Beijing, China
Abstract :
We report the bipolar resistive switching behaviors of the Al/DLC/W structure. The fabricated device shows good memory performances with high ON/OFF ratio, long data retention time, good endurance and low operation voltage. The formed gas bubbles at the Al surface after repeated SET and RESET operations are found to arise from the oxygen vacancies by the formation of Al2O3 layer at the DLC/Al interface, which is also responsible for the resistive switching behaviors of the device.
Keywords :
aluminium compounds; bipolar memory circuits; diamond-like carbon; oxygen; resistive RAM; tungsten; Al-C-W; Al2O3; DLC; RRAM; bipolar resistive switching behaviors; data retention time; diamond-like carbon; gas bubbles; oxygen vacancies; resistive switching random access memory; Abstracts; Films; RNA; Switches;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021531
