Title :
Trivalent ion-doping effect in TiO2-based resistive switching memory
Author :
Baiwen Zeng ; Dinglin Xu ; Yuzhou Zhou ; Minghua Tang
Author_Institution :
Key Lab. of Low Dimensional Mater. & Applic. Technol. of Minist. of Educ., Xiangtan Univ., Xiangtan, China
Abstract :
Trivalent metal ions (Al and Cr) were doped into a solution-synthesized TiO2 film, and the corresponding resistive switching characteristics were investigated in relation to the oxygen vacancies and chemical composition. In contrast to the pure TiO2 sample, the doped samples exhibited a better switching uniformity and a lower set voltage (Vset), which was attributed to the enhanced oxygen vacancy generation. Based on these results, the doping effects can be controlled in a continuous manner by selecting dopants based on the valence state of doped ions.
Keywords :
CMOS memory circuits; aluminium; chromium; integrated circuit manufacture; oxygen; resistive RAM; semiconductor doping; switching circuits; titanium compounds; Al; Cr; TiO2; chemical composition; oxygen vacancy generation; resistive switching memory; trivalent ion-doping effect; trivalent metal ions; Abstracts; Annealing; Artificial intelligence; Metals; Silicon; Switches;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021621
