Title :
AU-SWCNTS-HF Schottky diodes fabricated by dielectrophoresis
Author :
Mengge Li ; Jinwen Zhang
Author_Institution :
Nat. Key Lab. of Micro/Nanometer Fabrication Technol., Peking Univ., Beijing, China
Abstract :
In this paper we report a single-walled carbon nanotubes (SWCNTs) Schottky diodes fabricated by DEP technique. The device was made of semiconducting SWCNTs (s-SWCNTs) contacting with asymmetric-work-function metal electrodes of Au and Hf, and the properties were measured and analyzed in detail. The results show that our device has a good rectifying characteristic and could be tuned by a back gate voltage. Above 220K, thermionic emission is the dominant transport mechanism, while tunneling begins to lead below 220K. And the Schottky barrier height was calculated to be 0.48eV.
Keywords :
Schottky barriers; Schottky diodes; electrodes; electrophoresis; gold; hafnium; metals; rectifying circuits; single-wall carbon nanotubes; thermionic emission; work function; Au; DEP technique; Hf; Schottky barrier height; asymmetric-work-function metal electrodes; back gate voltage; dielectrophoresis technique; dominant transport mechanism; good rectifying characteristic; property measurement; s-SWCNT; semiconducting SWCNT Schottky diode fabrication; single-walled carbon nanotubes Schottky diode fabrication; thermionic emission; tunneling; Abstracts; Dielectrophoresis; Fabrication; Hafnium; Insulators; Nanotubes; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-1-4799-3296-2
DOI :
10.1109/ICSICT.2014.7021643
