DocumentCode :
2424380
Title :
Irregular 2D structure in the light emitting diode surface patterned by NSOM lithography
Author :
Kubicova, Ivana ; Pudis, Dusan ; Suslik, L´ubos ; Skriniarova, Jaroslava
Author_Institution :
Dept. of Phys., Univ. of Zilina, Zilina, Slovakia
fYear :
2012
fDate :
21-22 May 2012
Firstpage :
504
Lastpage :
507
Abstract :
In this paper, we present near-field scanning optical microscope (NSOM) in illumination mode as effective tool for semiconductor device surface patterning. In the illumination mode, the non-contact mode of the NSOM lithography is performed, where the fiber probe exposes defined spots in thin photoresist layer. As the scanning technique allows irregular two-dimensional patterning of different surfaces, this was applied on the GaAs/AlGaAs based light emitting diode surface. Patterned surface was analyzed by optical microscope and atomic force microscope.
Keywords :
aluminium compounds; gallium arsenide; lithography; near-field scanning optical microscopy; photoresists; GaAs-AlGaAs; NSOM lithography; atomic force microscope; illumination mode; irregular 2D structure; light emitting diode surface; near-field scanning optical microscope; photoresist layer; semiconductor device surface patterning; two-dimensional patterning; Light emitting diodes; Lithography; Microscopy; Optical fibers; Optical surface waves; Surface treatment; irregular 2D structure; light emitting diode surface patterning; near-field scanning optical microscope lithography; photonic structure;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ELEKTRO, 2012
Conference_Location :
Rajeck Teplice
Print_ISBN :
978-1-4673-1180-9
Type :
conf
DOI :
10.1109/ELEKTRO.2012.6225675
Filename :
6225675
Link To Document :
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