DocumentCode
2424967
Title
The microchip Q-switched Yb:YAG laser performance analysis
Author
Buryy, Oleg ; Melnik, Serhij ; Ubizskii, Serhij ; Matkovskii, Andrij
Author_Institution
Inst. of Telecommun., Radioelectronics & Electron. Eng., Lviv Polytech. Nat. Univ., Ukraine
fYear
2003
fDate
18-22 Feb. 2003
Firstpage
47
Lastpage
49
Abstract
In this paper, the possibility of using Yb:YAG generating media for passively Q-switched microchip lasers is considered. As is shown, the optical features of a Yb:YAG epitaxial film are practically the same as features of the Yb:YAG bulk monocrystal. The inessential dependence between pulse energy and generating medium length allows the use of either bulk monocrystals or epitaxial films.
Keywords
Q-switching; epitaxial layers; microchip lasers; ytterbium; yttrium compounds; YAG:Yb; YAl5O12:Yb; Yb:YAG bulk monocrystal; Yb:YAG epitaxial film; Yb:YAG generating media; laser performance analysis; microchip laser; passively Q-switched Yb:YAG laser; pulse energy; yttrium-aluminium garnet; Absorption; Crystals; Doping; Laser excitation; Laser transitions; Luminescence; Microchip lasers; Performance analysis; Pump lasers; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
CAD Systems in Microelectronics, 2003. CADSM 2003. Proceedings of the 7th International Conference. The Experience of Designing and Application of
Print_ISBN
966-553-278-2
Type
conf
DOI
10.1109/CADSM.2003.1254977
Filename
1254977
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