Title :
SOI-MOSFET´s body potential: floating or fixed?
Author :
Janczyk, Grzegorz
Author_Institution :
Inst. of Microelectron. & Optoelectronics, Warsaw Univ. of Technol., Poland
Abstract :
Relatively new and more and more advanced technologies like SOI although commonly applied, still remain promising, developing and conceal some ambiguous phenomena.
Keywords :
MOSFET; carrier lifetime; minority carriers; semiconductor device models; silicon-on-insulator; SOI simulators; SOI-MOSFET; Si; advanced technologies; channel operating rules; fixed potential; floating potential; minority carriers; performance improvement; strong inversion; universal models; voltage drop; Complexity theory; Dielectrics and electrical insulation; Electronics industry; Electrons; Frequency; MOSFET circuits; Microelectronics; Numerical models; Numerical simulation; Polarization;
Conference_Titel :
CAD Systems in Microelectronics, 2003. CADSM 2003. Proceedings of the 7th International Conference. The Experience of Designing and Application of
Print_ISBN :
966-553-278-2
DOI :
10.1109/CADSM.2003.1254983
