DocumentCode :
2427163
Title :
Electromigration study of Al and Cu metallization using WLR isothermal method
Author :
Lee, Tom C. ; Ruprecht, Michael ; Tibel, Deborah ; Sullivan, Tim D. ; Wen, Shengming
Author_Institution :
IBM Microelectron., Essex Junction, VT, USA
fYear :
2002
fDate :
2002
Firstpage :
327
Lastpage :
335
Abstract :
Wafer level electromigration behavior of copper and aluminum using isothermal stress was investigated in this paper. Lifetime, lognormal standard deviation, and activation energy were evaluated as a function of stress temperature as well as line width. Temperature dependence of the embedded 2D thermal behavior was modeled via the initial stress current versus the initial resistance correlations. The mass transport mechanisms in the highly accelerated wafer level electromigration were observed to be the same as those in moderately accelerated conventional package level electromigration for both Cu-based and Al-based systems.
Keywords :
aluminium; copper; electromigration; failure analysis; focused ion beam technology; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; life testing; Al; Cu; FIB channeling contrast images; Joule heating; ULSI chips; activation energy; electromigration lifetime; embedded 2D thermal behavior; highly accelerated electromigration; initial resistance correlations; initial stress current; interconnect conductors; isothermal stress; lognormal standard deviation; mass transport mechanisms; metallization; parametric tester; stress temperature; temperature coefficient of resistance; wafer level electromigration; Acceleration; Aluminum; Copper; Electromigration; Isothermal processes; Metallization; Semiconductor device modeling; Temperature dependence; Thermal resistance; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2002. 40th Annual
Print_ISBN :
0-7803-7352-9
Type :
conf
DOI :
10.1109/RELPHY.2002.996656
Filename :
996656
Link To Document :
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