Title :
The influence of IMD bake process on buried channel PMOS hot carrier reliability of advanced DRAM
Author :
Ahn, S.J. ; Lee, J.K. ; Jung, G.T. ; Cho, C.H. ; Hwang, Y.S. ; Shin, D.W. ; Jeong, H.S. ; Kim, Kinam
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyunggi, South Korea
Abstract :
We investigated the influence of the SOG deposition with two kinds of curing process on the hot carrier reliability of buried channel (BC) PMOSFET. It was found that the vacuum bake induced the effective negative charges in the trench sidewall oxide and degraded P+ active isolation and PMOS hot carrier reliability.
Keywords :
DRAM chips; MOSFET; dielectric thin films; hot carriers; isolation technology; semiconductor device reliability; DRAM; P+ active isolation; SOG deposition; buried channel PMOSFET; curing process; hot carrier reliability; inter metal dielectric; vacuum bake; Acceleration; Dielectrics; Etching; Hot carriers; MOSFET circuits; Oxidation; Random access memory; Stress; Temperature; Thermal degradation;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2002. 40th Annual
Print_ISBN :
0-7803-7352-9
DOI :
10.1109/RELPHY.2002.996661
